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HANBit
HMF1M64F4V
FLASH-ROM MODULE 8MByte (1M x 64-Bit) ,120PIN SMM,3.3V Part No. HMF1M64F4V
GENERAL DESCRIPTION
The HMF1M64F4V is a high-speed flash read only memory (FROM) module containing 262,144 words organized in an x64bit configuration. The module consists of four 1M x 16 FROM mounted on a 120-pin, SMM connector FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTLcompatible
FEATURES
w Access time : 80, 90, 120ns w High-density 8MByte design w High-reliability, low-power design w Single + 3V 0.3V power supply w Easy memory expansion w Hardware reset pin(RESET#) w FR4-PCB design w 120-Pin Designed by 60-Pin Fine Pitch Connector P1,P2 w Minimum 1,000,000 write cycle guarantee per sector w 20-year data retention at 125 oC w Flexible sector architecture w Embedded algorithms w Erase suspend / Erase resume
OPTIONS
w Timing 80ns access 90ns access 120ns access w Packages 120-pin SMM
MARKING
-80 -90 -120
F
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HANBit PIN ASSIGNMENT
P1 PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Symbol VCC DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 VCC DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 VCC A1 A2 A3 A4 A5 VCC A6 A7 A8 A9 VCC PIN 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 Symbol VSS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 VSS DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 VSS A10 A11 A12 A13 A14 VSS A15 A17 A18 A19 VSS PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Symbol VCC DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 VCC DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 VCC A20 A0 A16 WE1* WE2* VCC OE* RESET* WE0* RY_BY* VCC P2 PIN 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
HMF1M64F4V
Symbol VSS DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 VSS DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 VSS NC[BANK1* ] BANK0* VSS BYTE* WE3* VSS NC[WE4*] NC[WE5*] NC[WE6*] NC[WE7*] VSS
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FUNCTIONAL BLOCK DIAGRAM
HMF1M64F4V
DQ0 - DQ63 A0 - A19
64 20 A(0-19) DQ(0-15)
/WE0
/WE /OE /CE RY-BY /Reset
/BYTE
U2
A0-19 DQ(16-31) /WE1 /WE /OE /CE RY-BY /Reset /BYTE
U3
A(0-19) DQ(32-47) /WE2
/WE /OE /CE
RY-BY /Reset /BYTE
U1
A(0-19) DQ(48-63) /WE3 /OE /WE /BYTE
/OE /CE RY-BY /Reset
/BANK0
RY_/BY /Reset /BYTE
U4
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TRUTH TABLE
MODE STANDBY NOT SELECTED READ WRITE or ERASE NOTE: X means don't care /OE X H L X /CE H L L L /WE X H H L /RESET Vcc0.3V H H H
HMF1M64F4V
DQ ( /BYTE=L ) HIGH-Z HIGH-Z DOUT DIN
POWER STANDBY ACTIVE ACTIVE ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage with respect to ground all other pins Voltage with respect to ground Vcc Storage Temperature SYMBOL VIN,OUT VCC TSTG RATING -0.5V to Vcc+0.5V -0.5V to +4.0V -65oC to +150oC
Operating Temperature TA -40oC to +85oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at th ese or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER Vcc for 10% device Supply Voltages Ground SYMBOL Vcc VSS MIN 2.7V 0 TYP. 3.0 0 MAX 3.6V 0
DC AND OPERATING CHARACTERISTICS ( 0oC TA 70 oC )
PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Read Current (1) /OE = VIH, Vcc Active Write Current (2) Vcc Standby Current (3) Low Vcc Lock-Out Voltage Notes: /CE = VIL, /OE=VIH /CE, /RESET=Vcc0.3V 1MHZ ICC2 ICC3 VLKO TEST CONDITIONS Vcc=Vcc max, V IN= GND to Vcc Vcc=Vcc max, V OUT= GND to Vcc IOH = -2.0mA, Vcc = Vcc min IOL = 4.0mA, Vcc =Vcc min /CE = VIL, 5MHZ ICC1 2.3 16 120 20 2.5 mA A V SYMBOL IL1 IL0 VOH VOL MIN -1.0 -1.0 0.85x Vcc MAX 1.0 1.0 0.4 64 mA UNIT A A V V
1. The Icc current listed includes both the DC operating current and the frequent component (at 5MHz). 2. Icc active while embedded algorithm (program or erase) is in progress 3. Icc active while Embedded Erase or Embedded Program is in progress. 4. Not 100% tested
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ERASE AND PROGRAMMING PERFORMANCE
LIMITS PARAMETER MIN. Block Erase Time Chip Erase Time Word Programming Time Chip Programming Time TYP. 0.7 25 11 12 360 36 MAX. 15 sec sec s sec UNIT
HMF1M64F4V
COMMENTS
Excludes 00H programming prior to erasure Excludes system-level overhead
TSOP CAPACITANCE
PARAMETER SYMBOL CIN COUT CIN2 PARAMETER DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance TEST SETUP VIN = 0 VOUT = 0 VIN = 0 MIN MAX 7.5 12 9 UNIT pF pF pF
Notes : Capacitance is periodically sampled and not 100% tested.
TEST SPECIFICATIONS
TEST CONDITION Output load Input rise and fall times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels VALUE 1TTL gate 5 0 to 3 1.5 1.5 ns V V V UNIT
5.0V 2.7k Device Under Test CL IN3064 or Equivalent
6.2k
Diodes = IN3064 or Equivalent
Note : CL = 100pF including jig capacitance
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AC CHARACTERISTICS u Read Only Operations Characteristics
SPEED PARAMETER DESCRIPTION MIN tRC tACC tCE tOE tDF tOEH tQH Read Cycle Time Address Access time Chip Enable to Access time Output Enable time Chip Enable to Output High-Z Output Enable Hold Time Output Hold Time From Addresses, /CE or /OE 0 0 80 80 80 30 25 0 0 - 80 MAX MIN 90 90 90 35 30 -90 MAX
HMF1M64F4V
-120 MIN 120 120 120 50 30 0 0 MAX
UNIT
ns ns ns ns ns ns ns
u Erase/Program Operations Alternate /WE Controlled Writes
PARAMETER tWC tAS tAH tDS tDH tOES tGHWL tCS tCH tWP tWPH tPGM tBERS tVCS tRB tRH tRPD tRP DESCRIPTION Write Cycle Time (1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time Write Pulse Width Write Pulse Width High Programming Operation Sector Erase Operation (2) Vcc set up time Write Recover Time Before RY_/BY /RESET High Before Read /RESET Low to Standby Mode /RESET Pulse Width 0.7 50 0 50 20 500 -80 MIN 80 0 45 35 0 0 0 0 0 35 30 11 0.7 50 0 50 20 500 MAX MIN 90 0 45 45 0 0 0 0 0 35 30 11 0.7 50 0 50 20 500 -90 MAX MIN 120 0 50 50 0 0 0 0 0 50 30 11 -120 MAX ns ns ns ns ns ns ns ns ns ns ns s sec s ns ns s ns
Notes : : 1. Not 100% tested 2 . See the "Erase and Programming Performance" section for more information.
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u Erase/Program Operations Alternate /CE Controlled Writes
- 80 PARAMETER tWC tAS tAH tDS tDH tOES tGHWL tCS tCH tWP tWPH tPGM tBERS DESCRIPTION MIN Write Cycle Time(1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time Write Pulse Width Write Pulse Width High Programming Operation Sector Erase Operation (2) 0.7 80 0 45 35 0 0 0 0 0 35 30 11 0.7 MAX MIN 90 0 45 45 0 0 0 0 0 35 30 11 MAX -90
HMF1M64F4V
-120 MIN 120 0 50 50 0 0 0 0 0 50 30 11 0.7 MAX ns ns ns ns ns ns ns ns ns ns ns s sec
Notes : 1. Not 100% tested 2 . This does not include the preprogramming time
u READ OPERATIONS TIMING
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u RESET TIMING
HMF1M64F4V
u PROGRAM OPERATIONS TIMING Alternate /WE Controlled Writes
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HANBit
Alternate /CE Controlled Writes
HMF1M64F4V
u CHIP/BLOCK ERASE OPERATION TIMINGS
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HMF1M64F4V
u DATA# POLLING TIMES DURING INTERNAL ROUTINE OPERATION
u RY_ /BY TIMEING DURING ERASE / PROGRAM OPERATION
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u TOGGLE# BIT DURING INTERNAL ROUTINE OPERATION
HMF1M64F4V
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PACKAGE DIMENSIONS
HMF1M64F4V
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HMF1M64F4V
ORDERING INFORMATION
Component Number 4EA 4EA 4EA
Part Number
Density
Org.
Package
Vcc
SPEED
HMF1M64F4V-80 HMF1M64F4V-90 HMF1M64F4V-120
8MByte 8MByte 8MByte
X 64
120 Pin-SMM 120 Pin-SMM 120 Pin-SMM
3.3V 3.3V 3.3V
80ns 90ns 120ns
X 64 X 64
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